JDV2S05E_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon Epitaxial Planar Type VCO for UHF band

VCO for UHF band
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S05E
• Small Package
• High Capacitance Ratio : C_1V/C_4V = 1.9 (typ.)
• Low Series Resistance : r_s = 0.30 Ω (typ.)
JDV2S05E
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
V_R
10
V
T_j
125
°C
T_stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
V_R
I_R
C_1V
C_4V
C_1V/C_4V
r_s
I_R = 1 μA
V_R = 10 V
V_R = 1 V, f = 1 MHz
V_R = 4 V, f = 1 MHz
⎯
V_R = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured. V_sig = 100 mV_rms
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Min Typ. Max Unit
10
⎯
⎯
V
⎯
⎯
3
nA
3.85 4.2 4.55
pF
1.94 2.2 2.48
1.7 1.9
⎯
⎯
⎯
0.3 0.5
Ω
FE
1
2007-11-01