JDV2S02E Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Diode Silicon Epitaxial Planar Type

VCO for UHF band
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S02E
· Small Package
· High Capacitance Ratio: C1V/C4V = 2.0 (typ.)
· Low Series Resistance: rs = 0.60 Ω (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
V_R
T_j
T_stg
Rating
Unit
10
V
125
°C
-55~125
°C
JDV2S02E
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
V_R
I_R
C_1V
C_4V
C_1V/C_4V
r_s
I_R = 1 mA
V_R = 10 V
V_R = 1 V, f = 1 MHz
V_R = 4 V, f = 1 MHz
¾
V_R = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured. V_sig = 100 mV_rms
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g
Min Typ. Max Unit
10
¾
¾
V
¾
¾
3
nA
1.8 2.05 2.3
pF
0.83 1.03 1.23
1.8
2
¾
¾
¾
0.6
0.8
W
FB
1
2002-01-16