JDV2S01E-07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon Epitaxial Planar Type VCO for UHF band

VCO for UHF band
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S01E
JDV2S01E
Unit: mm
• Small Package
• High Capacitance Ratio: C_1V/C_4V = 2.0 (typ.)
• Low Series Resistance: r_s = 0.5 Ω (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Junction temperature
Storage temperature range
V_R
10
V
T_j
125
°C
T_stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Capacitance
Capacitance ratio
Series resistance
V_R
I_R
C_1V
C_4V
C_1V/C_4V
r_s
I_R = 1 μA
V_R = 10 V
V_R = 1 V, f = 1 MHz
V_R = 4 V, f = 1 MHz
⎯
V_R = 1 V, f = 470 MHz
Note: Signal level when capacitance is measured. V_sig = 100 mV_rms
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g
Min Typ. Max Unit
10
⎯
⎯
V
⎯
⎯
3
nA
2.85 3.15 3.45
pF
1.35 1.57 1.81
1.8
2
⎯
⎯
⎯
0.5 0.7
Ω
FA
1
2007-11-01