JDS2S03S Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF Tuner Band Switch Applications

TOSHIBA Diode Silicon Epitaxial Planar Type
JDS2S03S
VHF Tuner Band Switch Applications
JDS2S03S
Unit: mm
• Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
• Small total capacitance: C_T = 0.7 pF (typ.)
• Low series resistance: r_s = 0.6 Ω (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Forward current
Junction temperature
Storage temperature range
V_R
30
V
I_F
100
mA
T_j
150
°C
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011 g
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Forward voltage
Reverse current
Reverse voltage
Total capacitance
Series resistance
V_F
I_F = 2 mA
I_R
V_R = 15 V
V_R
I_R = 1 μA
C_T
V_R = 6 V, f = 1 MHz
r_s
I_F = 2 mA, f = 100 MHz
Note: Signal level when capacitance is measured: V_sig = 20 mVrms
Marking
Min Typ. Max Unit
⎯
⎯
0.85
V
⎯
⎯
0.1
μA
30
⎯
⎯
V
⎯
0.7
1.2
pF
⎯
0.6 0.9
Ω
0
1
2007-11-01