JDP4P02U Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – UHF~VHF Band RF Attenuator Applications

TOSHIBA Diode Silicon Epitaxial Pin Type
JDP4P02U
UHF~VHF Band RF Attenuator Applications
· Two independent diodes are packed into 4-pin ultra-small packages
and suitable for high-density mounting.
· Low capacitance: CT = 0.3 pF (typ.)
· Low series resistance: rs = 1.0 Ω (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Symbol
V_R
I_F
T_j
T_stg
Rating
Unit
30
V
50
mA
125
°C
-55~125
°C
JDP4P02U
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Forward voltage
Capacitance
Series resistance
V_R
I_R = 10 mA
I_R
V_R = 30 V
V_F
I_F = 50 mA
C_T
V_R = 1 V, f = 1 MHz
r_s
I_F = 10 mA, f = 100 MHz
Note: Signal level when capacitance is measured: Vsig = 20 mVrms
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-2U1A
Weight: 0.006 g (typ.)
Min Typ. Max Unit
30
¾
¾
V
¾
¾
0.1
mA
¾ 0.95 1.0
V
¾
0.3 0.5
pF
¾
1.0
¾
W
1
2003-03-24