JDP4P02AT Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – UHF~VHF Band RF Switch Applications

TOSHIBA Diode Silicon Epitaxial PIN Type
JDP4P02AT
JDP4P02AT
UHF~VHF Band RF Switch Applications
• Suitable for reducing set’s size as a result from enabling high-density
mounting due to 4-pin small packages.
• Low series resistance: r_s = 1.0 Ω (typ.)
• Low capacitance: C_T = 0.3 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
1.2±0.05
0.9±0.05
Unit: mm
1
4
2
3
Characteristics
Symbol
Rating
Unit
Reverse voltage
Forward current
Junction temperature
Storage temperature range
V_R
30
V
I_F
50
mA
T_j
150
°C
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
1.ANODE1
2.ANODE2
3.CATHODE2
4.CATHODE1
JEDEC
―
JEITA
―
TOSHIBA
1−1M1A
Weight: 0.0015 g(typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Forward voltage
Capacitance
Series resistance
V_R
I_R = 10 μA
I_R
V_R = 30 V
V_F
I_F = 50 mA
C_T
V_R = 1 V, f = 1 MHz
r_s
I_F = 10 mA, f = 100 MHz
Note: Signal level when capacitance is measured. V_sig = 100 mVrms
Marking
4
3
TX
1
2
Min Typ. Max Unit
30
⎯
⎯
V
⎯
⎯
0.1
μA
⎯
0.9 0.94
V
⎯
0.3
0.4
pF
⎯
1.0 1.5
Ω
1
2007-11-01