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JDP3C02AU_14 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – UHF-VHF Band RF Switch Applications
TOSHIBA Diode Silicon Epitaxial PIN Type
JDP3C02AU
UHF~VHF Band RF Switch Applications
• Suitable for reducing set’s size as a result from enabling high-density
mounting due to 3-pin small packages.
• Low series resistance: rs = 1.0 Ω (typ.)
• Low capacitance: CT = 0.28 pF (typ.)
JDP3C02AU
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Forward current
Junction temperature
Storage temperature range
VR
30
V
IF
50
mA
Tj
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Forward voltage
Capacitance
Series resistance
VR
IR = 10 μA
IR
VR = 30 V
VF
IF = 50 mA
CT
VR = 1 V, f = 1 MHz
rs
IF = 10 mA, f = 100 MHz
Note: Signal level when capacitance is measured. Vsig = 100 mVrms
Marking
Pin Assignment
USM
1.Anode1
2.Anode2
3.Cathode
JEDEC
JEITA
TOSHIBA
SOT-323
SC-70
1-2P1B
Weight: 6.3 mg (typ.)
Min Typ. Max Unit
30
⎯
⎯
V
⎯
⎯
0.1
μA
⎯
0.89 0.98
V
⎯ 0.28 0.48 pF
⎯
1.0 1.5
Ω
FE
Start of commercial production
2008-11
1
2014-03-01