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JDP2S12CR_14 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – UHF-VHF Band RF Switch Applications
TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S12CR
JDP2S12CR
UHF~VHF Band RF Switch Applications
• Suitable for high-density board assembly due to the use of a small
surface-mount package, S−FLAT
• Low series resistance: rs = 0.4 Ω (typ.)
• Low capacitance: CT = 1.0 pF (typ.)
Unit: mm
②
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Forward current
Power dissipation
Junction temperature
Storage temperature range
VR
180
V
IF
1
A
PD (Note 1)
1
W
Tj
175
°C
Tstg
−55 to 175
°C
0.9 ± 0.1
0.16
+ 0.2
①
1.6 − 0.1
① ANODE
② CATHODE
Note: Using continuously under heavy loads (e.g. the application of high
S-FLAT
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
JEDEC
―
JEITA
―
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
TOSHIBA
Weight: 13 mg
3-2A1A
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Note 1:Tc = 25°C (When mounted on a 110.0mm×30.0mm×1.0mm glass epoxy PCB)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse current
Forward voltage
Capacitance
Series resistance
IR
VR = 50 V
VF
IF = 50 mA
CT
VR = 40 V, f = 1 MHz
rs
IF = 10 mA, f = 100 MHz
Note: Signal level when capacitance is measured. Vsig = 100 mVrms
Min Typ. Max Unit
⎯
⎯
10
μA
⎯
0.8 1.0
V
⎯
1.0
1.3
pF
⎯
0.4 0.7
Ω
Marking
Abbreviation Code
P1
Part No.
JDP2S12CR
1
Start of commercial production
2010-03
2014-03-01