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JDP2S08SC_14 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – UHF-VHF Band RF Switch Applications
TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S08SC
UHF~VHF Band RF Switch Applications
JDP2S08SC
Unit: mm
• Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
• Low series resistance: rs = 1.0 Ω (typ.)
2
• Low capacitance: CT = 0.21 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
1
0.32±0.03
0.27±0.02
0.025±0.015
Characteristics
Reverse voltage
Symbol
VR
Rating
Unit
30
V
1:Cathode
2:Anode
Forward current
IF
50
mA
Junction temperature
Tj
150
°C
SC2
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
JEITA
TOSHIBA
―
―
1-1R1A
reliability significantly even if the operating conditions (i.e. operating Weight: 0.00017 g (typ.)
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
VR
IR = 10 μA
Reverse current
IR
VR = 30 V
Forward voltage
VF
IF = 50 mA
Capacitance(Note2)
CT
VR = 1 V, f = 1 MHz
Series resistance
rs
IF = 10 mA, f = 100 MHz
Note1: Signal level when capacitance is measured. Vsig = 100 mVrms
Marking
Min Typ. Max Unit
30
⎯
⎯
V
⎯
⎯
0.1 μA
⎯
0.89 0.95
V
⎯ 0.21 0.4
pF
⎯
1.0 1.5
Ω
Cathode
Part Mark
Start of commercial production
2004-11
1
2014-03-01