JDP2S05FS Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – UHF~VHF Band RF Switch Applications

TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S05FS
UHF~VHF Band RF Switch Applications
• Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
• Low series resistance: r_s = 1.5 Ω (typ.)
• Low capacitance: C_T = 0.32 pF (typ.)
JDP2S05FS
Unit:mm
0.6±0.05
A
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
0.2
±0.05
0.1±0.05
Reverse voltage
V_R
20
V
Forward current
Power dissipation(Note:1)
I_F
50
mA
Pd
150
mW
0.48^+-00..0032
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
―
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.0006 g(Typ.)
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: When mounted on glass epoxy board
board size : 20mm × 20mm × 1.6mmt
Cu foot area : 4mm × 4mm × 0.035mmt
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
V_R
I_R = 0.1μA
Reverse current
I_R
V_R = 20 V
Forward voltage
V_F
I_F = 50 mA
Capacitance(Note2)
C_T
V_R = 1 V, f = 1 MHz
Series resistance
r_s
I_F = 1 mA, f = 100 MHz
Note2: Signal level when capacitance is measured. V_sig = 100 mVrms
Min Typ. Max Unit
20
―
―
V
―
―
0.1 μA
―
―
0.94
V
0.21 0.32 0.42 pF
―
1.5 2.2
Ω
Marking
3
1
2007-11-01