JDP2S05CT Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – UHF~VHF Band RF Switch Applications

TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S05CT
UHF~VHF Band RF Switch Applications
• Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
• Low series resistance: r_s = 1.5 Ω (typ.)
• Low capacitance: C_T = 0.32 pF (typ.)
1
JDP2S05CT
Unit:mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
2
0.6±0.05
0.05±0.03 0.5±0.03
Reverse voltage
Forward current
Junction temperature
Storage temperature range
V_R
20
V
I_F
50
mA
T_j
150
°C
T_stg
−55~150
°C
CST2
１：Cathode
２：Anode
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
JEDEC
―
JEITA
―
TOSHIBA
1-1P1A
Weight: 0.00077 g(Typ.)
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
V_R
I_R = 0.1 μA
Reverse current
I_R
V_R = 20 V
Forward voltage
V_F
I_F = 50 mA
Capacitance(Note2)
C_T
V_R = 1 V, f = 1 MHz
Series resistance
r_s
I_F = 1 mA, f = 100 MHz
Note1: Signal level when capacitance is measured. V_sig = 100 mVrms
Min Typ. Max Unit
20
⎯
⎯
V
⎯
⎯
0.1 μA
⎯
⎯
0.94
V
0.21 0.32 0.42 pF
⎯
1.5 2.2
Ω
Marking
Cathode
03
Part Number
1
2007-11-01