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JDP2S04E_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – VHF~UHF Band RF Attenuator Applications
TOSHIBA Diode Silicon Epitaxial Pin Type
JDP2S04E
JDP2S04E
VHF~UHF Band RF Attenuator Applications
Unit: mm
• Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
• Low capacitance ratio: CT = 0.25 pF (typ.)
• Low series resistance: rs = 3 Ω (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
Forward current
Junction temperature
Storage temperature range
VR
50
V
IF
50
mA
Tj
125
°C
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Forward voltage
Capacitance
Series resistance
VR
IR = 10 μA
IR
VR = 50 V
VF
IF = 50 mA
CT
VR = 50 V, f = 1 MHz
rs
IF = 10 mA, f = 100 MHz
Note: Signal level when capacitance is measured: Vsig = 20 mVrms
Min Typ. Max Unit
50
⎯
⎯
V
⎯
⎯
0.1
μA
⎯ 0.95 1.0
V
⎯ 0.25 0.4
pF
⎯
3.0
⎯
Ω
Marking
1
2007-11-01