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JDP2S04E Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Diode Silicon Epitaxial Pin Type
TOSHIBA Diode Silicon Epitaxial Pin Type
JDP2S04E
VHF~UHF Band RF Attenuator Applications
· Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
· Low capacitance ratio: CT = 0.25 pF (typ.)
· Low series resistance: rs = 3 Ω (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Symbol
VR
IF
Tj
Tstg
Rating
Unit
50
V
50
mA
125
°C
-55~125
°C
JDP2S04E
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Forward voltage
Capacitance
Series resistance
VR
IR = 10 mA
IR
VR = 50 V
VF
IF = 50 mA
CT
VR = 50 V, f = 1 MHz
rs
IF = 10 mA, f = 100 MHz
Note: Signal level when capacitance is measured: Vsig = 20 mVrms
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1G1A
Weight: 0.0014 g (typ.)
Min Typ. Max Unit
50
¾
¾
V
¾
¾
0.1
mA
¾ 0.95 1.0
V
¾ 0.25 0.4
pF
¾
3.0
¾
W
1
2003-03-24