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JDP2S02S Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – UHF~VHF Band RF Attenuator Applications
TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S02S
UHF~VHF Band RF Attenuator Applications
· Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
· Low series resistance: rs = 1.0 Ω (typ.)
· Low capacitance: CT = 0.3 pF (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VR
30
V
IF
50
mA
Tj
150
°C
Tstg
−55~150
°C
JDP2S02S
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Forward voltage
Capacitance
Series resistance
VR
IR = 10 µA
IR
VR = 30 V
VF
IF = 50 mA
CT
VR = 1 V, f = 1 MHz
rs
IF = 10 mA, f = 100 MHz
Note: Signal level when capacitance is measured. Vsig = 20 mVrms
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1K1A
Weight: 0.0011 g
Min Typ. Max Unit
30
¾
¾
V
¾
¾
0.1
µA
¾
0.9 0.94
V
¾
0.3
0.5
pF
¾
1.0
1.5
Ω
2
1
2001-12-05