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JDP2S02AFS Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial PIN Type | |||
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TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S02AFS
JDP2S02AFS
UHF~VHF Band RF Switch Applications
· Suitable for reducing setâs size as a result from enabling high-density
mounting due to 2-pin small packages.
· Low series resistance: rs = 1.0 ⦠(typ.)
· Low capacitance: CT = 0.3 pF (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Symbol
Rating
Unit
VR
30
V
IF
50
mA
Tj
150
°C
Tstg
â55~150
°C
Unit: mm
0.6±0.05
A
0.2
±0.05
0.07 M A
0.1±0.05
0.48+-00..0023
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Forward voltage
Capacitance
Series resistance
VR
IR = 10 µA
IR
VR = 30 V
VF
IF = 50 mA
CT
VR = 1 V, f = 1 MHz
rs
IF = 10 mA, f = 100 MHz
Note: Signal level when capacitance is measured. Vsig = 100 mVrms
Marking
JEDEC
â
JEITA
â
TOSHIBA
1-1L1A
Weight: 0.0006 g
Min Typ. Max Unit
30
¾
¾
V
¾
¾
0.1
µA
¾
0.9 0.94
V
¾
0.3
0.4
pF
¾
1.0
1.5
â¦
2
1
2003-2-21
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