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JDP2S02ACT_14 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – UHF-VHF Band RF Switch Applications
TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S02ACT
UHF~VHF Band RF Switch Applications
• Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
• Low series resistance: rs = 1.0 Ω (typ.)
• Low capacitance: CT = 0.3 pF (typ.)
JDP2S02ACT
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Reverse voltage
VR
30
V
Forward current
IF
50
mA
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
JEITA
TOSHIBA
―
―
1-1P1A
reliability significantly even if the operating conditions (i.e. operating Weight: 0.00077g (typ.)
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba SemiCcoSnTd2uctor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
VR
IR = 10 μA
Reverse current
IR
VR = 30 V
Forward voltage
Capacitance(Note2)
Series resistance
VF
IF = 50 mA
CT
VR = 1 V, f = 1 MHz
rs
IF = 10 mA, f = 100 MHz
Note1: Signal level when capacitance is measured. Vsig = 100 mVrms
Marking
Cathode
Min Typ. Max Unit
30
⎯
⎯
V
⎯
⎯
0.1 μA
⎯
0.9 0.94
V
⎯
0.3
0.4
pF
⎯
1.0 1.5
Ω
02
1
Part Number
Start of commercial production
2003-11
2014-03-01