JDP2S01AFS Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial PIN Type

TOSHIBA Diode Silicon Epitaxial PIN Type
JDP2S01AFS
JDP2S01AFS
UHF~VHF Band RF Switch Applications
· Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
· Low series resistance: rs = 0.65Ω(typ.)
· Low capacitance: CT = 0.65 pF (typ.)
Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Symbol
Rating
Unit
V_R
30
V
I_F
50
mA
T_j
150
°C
T_stg
−55~150
°C
Unit: mm
0.6±0.05
A
0.2
±0.05
0.07 M A
0.1±0.05
0.48+-00..0023
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Reverse voltage
Reverse current
Forward voltage
Capacitance
Series resistance
V_R
I_R = 10 µA
I_R
V_R = 30 V
V_F
I_F = 50 mA
C_T
V_R = 1 V, f = 1 MHz
r_s
I_F = 10 mA, f = 100 MHz
Note: Signal level when capacitance is measured. V_sig = 100 mVrms
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.0006 g
Min Typ. Max Unit
30
¾
¾
V
¾
¾
0.1
µA
¾
0.86 0.92
V
¾
0.65 0.8
pF
¾ 0.65
1
Ω
1
1
2003-2-21