JDH2S03S Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – UHF Band Mixer

TOSHIBA DIODE Silicon Epitaxial Schottky Barrier Type
JDH2S03S
UHF Band Mixer
• High reverse voltage: VR = 30V
• Low fowerd voltage: V_F = 0.4V (max)
JDH2S03S
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Reverse voltage
Forward current
Junction temperature
Storage temperature range
Symbol
Rating
Unit
V_R
30
V
I_F
30
mA
T_j
125
°C
T_stg
−55 to 125
°C
Note:
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor
Reliability
Handbook
(“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
―
JEITA
―
TOSHIBA
1-1K1A
Weight: 1.1 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Forward voltage
Reverse current
Capacitance
V_F
I_F = 1mA
I_R
V_R = 30 V
C_T
V_R = 1 V,ｆ=1MHz
Note: Signal level when capacitance is measured: V_sig = 20 mVrms
Marking
Min Typ. Max Unit
⎯
⎯
0.4
V
⎯
⎯
0.5
μA
⎯
1.2
⎯
pF
1
2009-06-09