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JDH2S02SC Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – UHF Band Mixer | |||
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH2S02SC
UHF Band Mixer
⢠Suitable for reducing set size through the use of a two-pin small
ï¼1
package supporting high-density mounting
JDH2S02SC
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Forward current
Junction temperature
Storage temperature range
VR
10
V
IF
10
mA
Tj
125
°C
Tstg
â55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (âHandling
Precautionsâ/âDerating Concept and Methodsâ) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
2
ï¼
0.32±0.03
0.27±0.02
0.025±0.015
1: Cathode
ï¼ï¼ã«ã½ã¼ã
2: Aï¼nï¼ã¢odãeã¼ã
SC2
JEDEC
â
JEITA
â
TOSHIBA
1-1R1A
Weight: 0.17 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Forward voltage
Forward current
Reverse current
Capacitance
VF
IF = 1 mA
IF
VF = 0.5 V
IR
VR = 0.5 V
CT
VR = 0.2 V, f = 1 MHz
Note: Signal level when capacitance is measured: Vsig = 20 mVrms
Min Typ. Max Unit
⯠0.24 â¯
V
2
â¯
â¯
mA
â¯
â¯
25
μA
⯠0.25 â¯
pF
Marking
ï¼
ï¼
Caution
This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and
other objects that come into direct contact with the product should be made of antistatic materials.
1
2008-02-05
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