JDH2S01T Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – Diode Silicon Epitaxial Schottky Barrier Type

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH2S01T
UHF Band Mixer
· Suitable for reducing set’s size as a result from enabling high-density
mounting due to 2-pin small packages.
Maximum Ratings (Ta = 25°C)
Characteristics
Maximum (peak) reverse voltage
Forward current
Junction temperature
Storage temperature range
Symbol
V_RM
I_F
T_j
T_stg
Rating
Unit
5
V
30
mA
125
°C
-55~125
°C
JDH2S01T
Unit: mm
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Forward voltage
Forward current
Reverse current
Capacitance
V_F
I_F = 2 mA
I_F
V_F = 0.5 V
I_R
V_R = 0.5 V
C_T
V_R = 0.2 V, f = 1 MHz
Note: Signal level when capacitance is measured: Vsig = 20 mVrms
Marking
JEDEC
―
JEITA
―
TOSHIBA
1-1H1A
Weight: 0.0013 g (typ.)
Min Typ. Max Unit
¾ 0.25 ¾
V
30
¾
¾
mA
¾
¾
25
mA
¾
0.6
¾
pF
1
2003-03-24