JDH2S01FS Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – UHF Band Mixer

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH2S01FS
JDH2S01FS
UHF Band Mixer
• Suitable for reducing set size through the use of a two-pin small
package supporting high-density mounting
•
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Forward current
Junction temperature
Storage temperature range
V_R
4
V
I_F
25
mA
T_j
125
°C
T_stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Forward voltage
Forward current
Reverse current
Capacitance
V_F
I_F = 2 mA
I_F
V_F = 0.5 V
I_R
V_R = 0.5 V
C_T
V_R = 0.2 V, f = 1 MHz
Note: Signal level when capacitance is measured: Vsig = 20 mVrms
Marking
Z
Unit: mm
0.6±0.05
A
0.2
0.07 M A ^±0.05
0.1±0.05
0.48+-00..0023
JEDEC
―
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.0006 g (typ.)
Min Typ. Max Unit
⎯ 0.25 ⎯
V
25
⎯
⎯
mA
⎯
⎯
25
μA
⎯
0.6
⎯
pF
Caution
This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and
other objects that come into direct contact with the product should be made of antistatic materials.
1
2007-11-01