HN4D02JU Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Ultra High Speed Switching Applications

TOSHIBA Diode Silicon Epitaxial Planar Type
HN4D02JU
HN4D02JU
Ultra High Speed Switching Applications
Unit: mm
z Low forward voltage
: V_{F (3)} = 0.90V (typ.)
z Fast reverse recovery time : t_rr = 1.6ns (typ.)
z Small total capacitance : C_T = 0.9pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
V_RM
V_R
I_FM
I_O
I_FSM
P
T_j
T_stg
85
V
80
V
300*
mA
100*
mA
2*
A
200**
mW
150
°C
−55∼150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
* : Unit rating; Total rating = unit rating × 1.5
** :Total rating
1.ANODE1
2 . C AT H O D E
3.ANODE2
4.ANODE3
5.ANODE4
JEDEC
―
JEITA
―
TOSHIBA
1-2V1C
Weight: 0.0062g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
Test
Circuit
Test Condition
― IF = 1mA
― IF = 10mA
― IF = 100mA
― VR = 30V
― VR = 80V
Total capacitance
C_T
― VR = 0, f = 1MHz
Reverse recovery time
t_rr
― IF = 10mA, Fig.1
Min Typ. Max Unit
― 0.60 ―
― 0.72 ―
V
― 0.90 1.20
―
―
0.1
μA
―
―
0.5
―
0.9
―
pF
―
1.6
―
ns
Fig. 1 Reverse Recovery Time (t_rr) Test Circuit
1
2007-11-01