HN4C06J Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Audio Frequency General Purpose Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN4C06J
Audio Frequency General Purpose Amplifier Applications
z High voltage : V_CEO = 120V
z High h_FE : h_FE = 200~700
z Excellent h_FE linearity
: h_FE (I_C = 0.1mA) / h_FE (I_C = 2mA) = 0.95 (typ.)
z Low noise : NF = 1dB(typ.)
HN4C06J
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V_CBO
120
V
Collector-emitter voltage
V_CEO
120
V
Emitter-base voltage
Collector current
Base current
Collector power dissipation
V_EBO
I_C
I_B
P_C*
5
V
100
mA
20
mA
300
mW
1.BASE1
(B1)
2.EMITTER
(E)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.COLLECTOR1 (C1)
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high ^JEITA
―
temperature/current/voltage and the significant change in
TOSHIBA
2-3L1A
temperature, etc.) may cause this product to decrease in the
Weight: 0.014g(Typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*Total rating. Power dissipation per element should not exceed 200mW.
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Min Typ. Max Unit
Collector cut-off current
I_CBO
― V_CB = 120V, I_E = 0
―
―
0.1 μA
Emitter cut-off current
I_EBO
― V_EB = 5V, I_C = 0
―
―
0.1 μA
DC current gain
h_FE
― V_CE = 6V, I_C = 2mA
200
―
700
Collector-emitter saturation voltage
V_{CE (sat)}
― I_C = 10mA, I_B = 1mA
―
―
0.3
V
Transition frequency
f_T
― V_CE = 6V, I_C = 1mA
―
100
― MHz
Collector output capacitance
C_ob
― V_CB = 10V, I_E = 0, f = 1MHz
―
3.0
―
pF
Noise figure
NF
⎯
V_CE = 6 V, I_C = 0.1 mA
f = 1 kHz, R_G = 10 kΩ
―
1.0
―
dB
Note:h_FE Classification GR(G): 200~400, BL (L): 350~700 ( ) Marking Symbol.
Marking
Type Name
hFE Rank
Equivalent Circuit (Top View)
5
4
Q1
Q2
DG
12 3
1
2007-11-01