HN4B04J Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application

HN4B04J
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
HN4B04J
Audio Frequency General Purpose Amplifier Applications
Driver Stage Amplifier Applications
Switching application
Q1:
z Excellent h_FE linearity
: h_FE(2) =25 (Min.) at V_CE = −6V I_C = −400mA
Unit: mm
Q2:
z Excellent h_FE linearity
: h_FE(2) =25 (Min.) at V_CE = 6V I_C = 400mA
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Rating
−35
−30
−5
−500
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V_CBO
V_CEO
V_EBO
I_C
Rating
35
30
5
500
1.BASE1
(B1)
2.EMITTER
(E)
3.BASE2
(B2)
Unit
4.COLLECTOR2 (C2)
5.COLLECTOR1 (C1)
V
V
JEDEC
―
V
JEITA
―
mA
TOSHIBA
2-3L1A
Weight: 0.014g (typ.)
Unit
V
V
V
mA
Q1,Q2 Common Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector power dissipation
P_C*
300
mW
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*Total rating. Power dissipation per element should not exceed 200mW.
1
2007-11-01