HN4A56JU Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Audio Frequency General Purpose Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN4A56JU
HN4A56JU
Audio Frequency General Purpose Amplifier Applications
Unit: mm
z Small Package (Dual Type)
z High Voltage and High Current
: V_CEO= −50V, I_C = −150mA(MAX.)
z High h_FE
z Excellent h_FE Linearity
: h_FE (I_C = −0.1mA) / h_FE (I_C = −2mA) = 0.95 (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V_CBO
V_CEO
V_EBO
I_C
−50
V
−50
V
−5
V
−150
mA
1.EMITTER1 (E1)
2.BASE
(B)
3.EMITTER2 (E2)
4.COLLECTOR2 (C2)
5.COLLECTOR1 (C1)
Base current
I_B
−30
mA
Collector power dissipation
Junction temperature
Storage temperature range
P_C*
200
mW
JEDEC
―
T_j
150
°C
JEITA
―
TOSHIBA
2-2L1C
T_stg
−55~150
°C
Weight: 0.0062g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*Total rating: Power dissipation per element should not exceed 130mW.
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Transition frequency
Collector output capacitance
Symbol
I_CBO
I_EBO
h_FE
V_CE
f_T
C_ob
Test
Circuit
Test Condition
⎯ V_CB = −50V, I_E = 0
⎯ V_EB = −5V, I_C = 0
⎯ V_CE = −6V, I_C = −2mA
⎯ I_C = −100mA, I_B = −10mA
⎯ V_CE = −10V, I_C = −1mA
⎯ V_CB = −10V, I_E = 0, f = 1MHz
Min Typ. Max Unit
⎯
⎯ −0.1 μA
⎯
⎯ −0.1 μA
120
⎯
400
⎯ −0.1 −0.3 V
60
⎯
⎯ MHz
⎯
4
⎯
pF
Marking
Equivalent Circuit (Top View)
5
4
37
Q1
Q2
1
2
3
1
2007-11-01