HN3C51F Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Audio Frequency General Purpose Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN3C51F
HN3C51F
Audio Frequency General Purpose Amplifier Applications
z High voltage : V_CEO = 120V
z High h_FE : h_FE = 200~700
z Excellent h_FE linearity
: h_FE (I_C = 0.1mA) / h_FE (I_C = 2mA) = 0.95 (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Unit: mm
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V_CBO
120
V
Collector-emitter voltage
V_CEO
120
V
Emitter-base voltage
V_EBO
5
V
Collector current
I_C
100
mA
Base current
Collector power dissipation
Junction temperature
Storage temperature range
I_B
20
mA
P_C*
300
mW
T_j
150
°C
T_stg
−55~150
°C
1.COLLECTOR1 (C1)
2.EMITTER1 (E1)
3.COLLECTOR2 (C2)
4.EMITTER2 (E2)
5.BASE2
(B2)
6.BASE1
(B1)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.) may cause this product to decrease in the
JEITA
―
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-3N1B
operating temperature/current/voltage, etc.) are within the
Weight: 0.015g (Typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*Total rating. Power dissipation per element should not exceed 200mW.
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Collector cut-off current
I_CBO
― V_CB = 120V, I_E = 0
Emitter cut-off current
I_EBO
― V_EB = 5V, I_C = 0
DC current gain
h_FE
― V_CE = 6V, I_C = 2mA
Collector-emitter saturation voltage
V_CE
― I_C = 10mA, I_B = 1mA
Transition frequency
f_T
― V_CE = 6V, I_C = 1mA
Collector output capacitance
C_ob
― V_CB = 10V, I_E = 0, f = 1MHz
Noise figure
NF
―
V_CE = 6 V, I_C = 0.1 mA
f = 1 kHz, R_G = 10 kΩ
Note:h_FE Classification GR(G): 200~400, BL (L): 350~700 ( ) Marking Symbol.
Min Typ. Max Unit
―
―
0.1 μA
―
―
0.1 μA
200
―
700
―
―
0.3
V
―
100
― MHz
―
3.0
―
pF
―
1.0
―
dB
Marking
Type Name
hFE Rank
Equivalent Circuit (Top View)
6
5
4
Q1
Q2
DG
12
3
1
2007-11-22