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HN2S05FU Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High-Speed Switching Applications
TOSHIBA Diode Epitaxial Schottky Barrier Type
HN2S05FU
HN2S05FU
High-Speed Switching Applications
Unit: mm
z The HN2S05FU is composed of three (3) independent diodes.
z Excellent forward current and forward voltage characteristics:
VF = 0.23 V (typ.) @ IF = 5 mA
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VRM
15
V
Reverse voltage
VR
10
V
Maximum (peak) forward current
IFM
200 *
mA
Average forward current
IO
100 *
mA
Surge current (10 ms)
Power dissipation
Junction temperature
Storage temperature range
IFSM
P
Tj
Tstg
1*
A
100 *
mW
125
°C
−55∼125
°C
1.ANODE
2.ANODE
3.ANODE
4.CATHODE
5.CATHODE
6.CATHODE
Operating temperature range
Topr
−40∼110
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
JEITA
―
TOSHIBA
1-2T1E
Weight: 6.2 mg (typ.)
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : This is the absolute maximum rating for a single diode (Q1, Q2 or Q3).
Where two or three diodes are used, the absolute maximum rating per diode is 75% that for a single diode.
** :Total rating
Electrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
VF (1)
VF (2)
VF (3)
IR
CT
Test Condition
IF = 1 mA
IF = 5 mA
IF = 100 mA
VR = 10 V
VR = 0, f = 1 MHz
Min Typ. Max Unit
― 0.18 ―
―
0.23 0.30
V
― 0.35 0.50
―
―
20 μA
―
5
― pF
Pin Assignment (top view)
65 4
Marking
Q1 Q2
Q3
B4
12 3
1
2007-11-01