HN2S03FU Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – High Speed Switching Application

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
HN2S03FU
HN2S03FU
High Speed Switching Application
Unit: mm
z HN2S03FU is composed of 3 independent diodes.
z Low forward voltage
: V_{F (3)} = 0.50V (typ.)
z Low reverse current
: I_R= 0.5μA (max)
z Small total capacitance : C_T = 3.9pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
V_RM
25
V
Reverse voltage
V_R
20
V
Maximum (peak) forward current
I_FM
100 *
mA
Average forward current
I_O
50 *
mA
Surge current (10ms)
I_FSM
1*
A
Power dissipation
P
200 **
mW
Junction temperature
T_j
125
°C
JEDEC
―
Storage temperature range
T_stg
−55∼125
°C
EIAJ
―
Operating temperature range
T_opr
−40∼110
°C
TOSHIBA
1-2T1C
Weight: 6.2mg(Typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : This is absolute maximum rating of single diode (Q1 or Q2 or Q3).
In the case of using 2 or 3 diodes, the absolute maximum ratings
per diodes is 75 % of the single diode one.
** :Total rating
Electrical Characteristics (Q1, Q2, Q3 Common, Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_R
C_T
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 5mA
― I_F = 50mA
― V_R = 20V
― V_R = 0, f = 1MH_z
Min Typ. Max Unit
― 0.33 ―
― 0.38 ―
V
― 0.50 0.55
―
―
0.5 μA
―
3.9
―
pF
1
2007-11-01