HN2D01JE Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon Epitaxial Planar Type Ultra High Speed Switching Application

TOSHIBA Diode Silicon Epitaxial Planar Type
HN2D01JE
Ultra High Speed Switching Application
HN2D01JE
Unit: mm
z The HN2D01JE is composed of 2 independent diodes.
z Low forward voltage
: V_{F (3)} = 0.98V (typ.)
z Fast reverse recovery time : t_rr = 1.6ns (typ.)
z Small total capacitance : C_T = 0.5pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
V_RM
V_R
I_FM
I_O
I_FSM
85
V
80
V
200 *
mA
100 *
mA
1*
A
1.ANODE1
2.NC
3.ANODE2
4.CATHODE2
5.CATHODE1
Power dissipation
P
100 **
mW
Junction temperature
Storage temperature
T_j
150
°C
JEDEC
―
T_stg
−55∼150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
1-2W1B
Weight: 0.003 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating; total rating = unit rating × 1.5.
**: Total rating.
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 10mA
― I_F = 100mA
― V_R = 30V
― V_R = 80V
― V_R = 0, f = 1MH_z
― I_F = 10mA, Fig.1
Min Typ. Max Unit
― 0.62 ―
― 0.75 ―
V
― 0.98 1.20
―
―
0.1
μA
―
―
0.5
―
0.5
―
pF
―
1.6
―
ns
1
2007-11-01