HN2D01F_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Ultra High Speed Switching Application

TOSHIBA Diode Silicon Epitaxial Planar Type
HN2D01F
Ultra High Speed Switching Application
HN2D01F
Unit in mm
z HN2D01F is composed of 3 independent diodes.
z Low forward voltage
: V_{F (3)} = 0.98V (typ.)
z Fast reverse recovery time : t_rr = 1.6ns (typ.)
z Small total capacitance : C_T = 0.5μF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
V_RM
V_R
I_FM
I_O
I_FSM
85
V
80
V
240 (*)
mA
80 (*)
mA
1 (*)
A
Power dissipation
P
300
mW
Junction temperature
Storage temperature range
T_j
125
°C
JEDEC
T_stg
−55~125
°C
EIAJ
―
SC-74
Note: Using continuously under heavy loads (e.g. the application of high ^TOSHIBA
1-3K1C
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 0.015g
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) This is absolute maximum rating of single diode (Q1 or Q2 or Q3).
In the case of using 2 ro 3 diodes, the absolute maximum ratings
per diodes is 75 %f the single diode one.
Electrical Characteristics (Q1, Q2, Q3 Common Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
trr
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 10mA
― I_F = 100mA
― V_R = 30V
― V_R = 80V
― _{VR = 0, f = 1MHz}
― _{IF = 10mA (Fig.1)}
Min Typ. Max Unit
― 0.62 ―
― 0.75 ―
V
― 0.98 1.20
―
―
0.1
μA
―
―
0.5
―
0.5
3.0
pF
―
1.6
4.0
ns
1
2007-11-01