HN2A26FS Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Frequency General-Purpose Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN2A26FS
HN2A26FS
Frequency General-Purpose Amplifier Applications
• Two devices are incorporated into a fine-pitch, Small-Mold (6-pin)
package.
• High voltage: V_CEO = −50 V
• High current: I_C = −100 mA (max)
• High h_FE: h_FE = 120 to 400
• Excellent h_FE linearity
: h_FE (I_C = −0.1 mA)/h_FE (I_C = −2 mA) = 0.95 (typ.)
• Lead (Pb) - free
0.1±0.05
Unit: mm
1.0±0.05
0.8±0.05
0.1±0.05
1
6
2
5
3
4
Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Total rating.
Symbol
Rating
Unit
V_CBO
−50
V
V_CEO
−50
V
V_EBO
−5
V
I_C
−100
mA
I_B
−30
mW
P_C(Note)
50
mW
T_j
150
°C
T_stg
−55 ~ 150
°C
1. EMITTER1
(E1)
2. EMITTER2
(E2)
3. BASE2
(B2)
4. COLLECTOR2 (C2)
fS6 5. BASE1
(B1)
6. COLLECTOR1 (C1)
JEDEC
―
JEITA
―
TOSHIBA
2-1F1C
Weight: 0.001 g (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Collector cutoff current
I_CBO
V_CB = −50 V, I_E = 0
Emitter cutoff current
I_EBO
V_EB = −5 V, I_C = 0
DC current gain
h_FE(Note) V_CE = −6 V, I_C = −2 mA
Collector-emitter saturation voltage
V_{CE (sat)} I_C = −100 mA, I_B = −10 mA
Transition frequency
f_T
V_CE = −10 V, I_C = −1 mA
Collector output capacitance
C_ob
V_CB = −10 V, I_E = 0, f = 1 MHz
Note: h_FE Classification Y (F): 120 ~ 140, GR (H): 200 ~ 400
( ) Marking symbol
Min Typ. Max Unit
⎯
⎯ −0.1 µA
⎯
⎯ −0.1 µA
120 ⎯ 400
― −0.18 −0.3
V
80
⎯
⎯ MHz
⎯
1.6
⎯
pF
Marking
PF
Equivalent Circuit (top view)
Type Name
h_FE Rank
654
Q1
Q2
123
1
2005-04-11