|
HN2A01FU_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Audio Frequency General Purpose Amplifier Applications | |||
|
HN2A01FU
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN2A01FU
Audio Frequency General Purpose Amplifier Applications
z Small package (dual type)
z High voltage and high current : VCEO = â50V, IC = â150mA (max)
z High hFE
: hFE = 120~400
z Excellent hFE linearity
: hFE (IC = â0.1mA) / (IC = â2mA)
= 0.95 (typ.)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
â50
V
Collector-emitter voltage
VCEO
â50
V
Emitter-base voltage
VEBO
â5
V
Collector current
IC
â150
mA
Base current
IB
â30
mA
Collector power dissipation
PC*
200
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
â55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
â
â
2-2J1B
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Collector cut-off current
ICBO
â VCB = â50V, IE = 0
Emitter cut-off current
IEBO
â VEB = â5V, IC = 0
DC current gain
hFE (Note)
â VCE = â6V, IC = â2mA
Collector-emitter saturation voltage
VCE (sat)
â IC = â100mA, IB = â10mA
Transition frequency
fT
â VCE = â10V, IC = â1mA
Collector output capacitance
Cob
â VCB = â10V, IE = 0, f = 1MHz
Note: hFE classification
Y(Y): 120~240, GR(G): 200~400
( ) marking symbol
Marking
Equivalent Circuit (Top View)
Min Typ. Max Unit
â
â â0.1 μA
â
â â0.1 μA
120
â
400
â
â
â0.1 â0.3
V
80
â
â
MHz
â
4
7
pF
1
2007-11-01
|
▷ |