HN2A01FE Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Audio Frequency General Purpose Amplifier Applications

HN2A01FE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN2A01FE
Audio Frequency General Purpose Amplifier Applications
z Small package (dual type)
z High voltage and high current : V_CEO = −50V, I_C = −150mA (max)
z High h_FE
: h_FE = 120~400
z Excellent h_FE linearity
: h_FE (I_C = −0.1mA) / (I_C = −2mA)= 0.95 (typ.)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
V_CBO
V_CEO
V_EBO
I_C
−50
V
−50
V
−5
V
−150
mA
1.EMITTER1 (E1)
2.EMITTER2 (E2)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.BASE1
(B1)
6.COLLECTOR1 (C1)
Base current
I_B
−30
mA
Collector power dissipation
P_C*
100
mW
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
TOSHIBA
―
2-2N1A
temperature, etc.) may cause this product to decrease in the
Weight: 3.0mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Collector cut-off current
I_CBO
― V_CB = −50V, I_E = 0
Emitter cut-off current
I_EBO
― V_EB = −5V, I_C = 0
DC current gain
h_{FE (Note)}
― V_CE = −6V, I_C = −2mA
Collector-emitter saturation voltage
V_{CE (sat)}
― I_C = −100mA, I_B = −10mA
Transition frequency
f_T
― V_CE = −10V, I_C = −1mA
Collector output capacitance
C_ob
― V_CB = −10V, I_E = 0, f = 1MH_z
Note: h_FE classification Y(Y): 120~240, GR(G): 200~400 ( ) marking symbol
Min Typ. Max Unit
―
― −0.1 μA
―
― −0.1 μA
120
―
400
―
―
−0.1 −0.3
V
80
―
―
MH_z
―
4
―
pF
Marking
654
Type Name
hFE Rank
Equivalent Circuit (Top View)
M1Y
123
1
2007-11-01