HN1V02H_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon Epitaxial Planar Type AM Radio Band Tuning Applications

HN1V02H
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
HN1V02H
AM Radio Band Tuning Applications
Unit: mm
• High capacitance ratio: C1 V/C8 V = 19.5 (typ.)
• High Q: Q = 200 (min)
• Including two devices in FM8 package (flat pack mini 8 pin)
• Low voltage operation: V_R = 1~8 V
Absolute Maximum Ratings (Ta = 25°C) (D₁, D₂)
Characteristics
Reverse voltage
Junction temperature
Storage temperature range
Symbol
Rating
Unit
V_R
16
V
T_j
125
°C
T_stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
JEDEC
―
JEITA
―
TOSHIBA
1-5J1B
Weight: 0.05 g (typ.)
Electrical Characteristics (Ta = 25°C) (D₁, D₂)
Characteristics
Reverse voltage
Reverse current
Capacitance
Capacitance
Capacitance
Capacitance
Capacitance ratio
Figure of merit
Symbol
Test Condition
V_R
I_R
C1 V
C3 V
C5 V
C8 V
C1 V/C8 V
I_R = 10 μA
V_R = 16 V
V_R = 1 V, f = 1 MHz
V_R = 3 V, f = 1 MHz
V_R = 5 V, f = 1 MHz
V_R = 8 V, f = 1 MHz
⎯
Q
V_R = 1 V, f = 1 MHz
Note 1: Two devices in one package are matched for capacitance to 2.5%.
C (max) − C (min)
C (min)
<= _{0.025 (VR = 1~8 V)}
Note 2: C8 V is devided into two classifications as follows.
Min Typ. Max Unit
16
⎯
⎯
V
⎯
⎯
20
nA
435
⎯
540
pF
140
⎯
250
pF
50.0 ⎯ 90.0 pF
19.9 ⎯ 26.7 pF
16.2 19.5 ⎯
⎯
200 ⎯
⎯
⎯
Classification
A
B
C8 V (pF)
19.9~23.7
22.4~26.7
1
2007-11-01