HN1L03FU_07 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – High Speed Switching Applications

TOSHIBA Field Effect Transistor Silicon N·P Channel MOS Type
HN1L03FU
High Speed Switching Applications
Analog Switch Applications
HN1L03FU
Unit in mm
Q1, Q2 common
z Low threshold voltage
Q1: Vth = 0.8~2.5V
z High speed
z Small package
Q2: Vth =−0.5~−1.5V
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-Source voltage
Gate-Source voltage
Drain current
Symbol
V_DS
V_GSS
I_D
Rating
Unit
50
V
10
V
50
mA
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Drain-Source voltage
Gate-Source voltage
Drain current
Symbol
V_DS
V_GSS
I_D
Rating
−20
−7
−50
JEDEC
―
EIAJ
Unit
TOSHIBA
―
2-2J1C
V
Weight: 6.8mg
V
Marking
mA
Absolute Maximum Ratings (Q1, Q2 Common)
(Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain power dissipation
Channel temperature
Storage temperature range
P_D*
200
mW
T_ch
150
°C
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
*
Total rating
Equivalent Circuit
(Top View)
1
2007-11-01