HN1D04FU_14 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – TOSHIBA Diode Silicon Epitaxial Planar Type

TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D04FU
Ultra High Speed Switching Application
z Low forward voltage
: V_F(3) = 0.90V (typ.)
z Fast reverse recovery time : t_rr = 1.6ns (typ.)
z Small total capacitance : C_T = 0.9pF (typ.)
HN1D04FU
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
Junction temperature
Storage temperature
V_RM
V_R
I_FM
I_O
I_FSM
P
T_j
T_stg
85
V
80
V
300*
mA
100*
mA
2*
A
200**
mW
150
°C
−55 to 150
°C
US6
1.ANODE1
2.CATHODE2
3.ANODE4
CATHODE3
4.ANODE3
5.CATHODE4
6.CATHODE1
ANODE2
Note: Using continuously under heavy loads (e.g. the application of high ^JEDEC
―
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
TOSHIBA
1-2T1F
reliability significantly even if the operating conditions (i.e. operating _{Weight: 6.8 g (typ.)}
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Where Q1 and Q2 or Q3 and Q4 are used independently or simultaneously, the Absolute Maximum Ratings per
diode are 50% of those of the single diode.
** : Total rating
Electrical Characteristics (Q1, Q2, Q3, Q4 Common; Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 10mA
― I_F = 100mA
― V_R = 30V
― V_R = 80V
― V_R = 0, f = 1MHz
― IF = 10mA (fig.1)
Min Typ. Max Unit
― 0.60 ―
― 0.75 ―
V
― 0.90 1.20
―
―
0.1
μA
―
―
0.5
―
0.9
―
pF
―
1.6
―
ns
Start of commercial production
2000-12
1
2014-03-01