HN1D02F_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Ultra-High-Speed Switching Applications

TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D02F
Ultra-High-Speed Switching Applications
HN1D02F
Unit: mm
z The HN1D02F is composed of two (2) cathode common units.
z Low forward voltage
: V_F (3) = 0.90 V (typ.)
z Fast reverse recovery time : t_rr = 1.6 ns (typ.)
z Small total capacitance : C_T = 0.9 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
85
V
Reverse voltage
V_R
80
V
Maximum (peak) forward current
I_FM
300 (*)
mA
Average forward current
I_O
100 (*)
mA
Surge current (10 ms)
I_FSM
2 (*)
A
Power dissipation
P
300
mW
Junction temperature
Storage temperature
T_j
125
°C
JEDEC
JEITA
T_stg
−55~125
°C
TOSHIBA
―
―
1-3K1B
Note: Using continuously under heavy loads (e.g. the application of high ^{Weight: 0.015 g (typ.)}
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) These are the Absolute Maximum Ratings for a single diode (Q1 or Q2 or Q3 or Q4). If Unit 1 and Unit 2 are
used independently or simultaneously, the Absolute Maximum Ratings per diode are 75% of those of a single
diode.
Electrical Characteristics (Q1, Q2, Q3, Q4 Common, Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test
Circuit
Test Condition
― I_F = 1 mA
― I_F = 10 mA
― I_F = 100 mA
― V_R = 30 V
― V_R = 80 V
― V_R = 0, f = 1 MHz
― I_F =10 mA (Fig. 1)
Min Typ. Max Unit
― 0.60 ―
― 0.72 ―
V
― 0.90 1.20
―
―
0.1
μA
―
―
0.5
―
0.9 3.0 pF
―
1.6 4.0
ns
1
2007-11-01