HN1D02FU_07 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon Epitaxial Planar Type Ultra High Speed Switching Application

TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D02FU
Ultra High Speed Switching Application
z HN1D02FU is composed of 2 unit of cathode common.
z Low forward voltage
: VF (3) = 0.90V (typ.)
z Fast reverse recovery time : trr = 1.6ns (typ.)
z Small total capacitance : CT = 0.9pF (typ.)
HN1D02FU
Unit in mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
85
V
Reverse voltage
V_R
80
V
Maximum (peak) forward current
I_FM
300*
mA
Average forward current
I_O
100*
mA
Surge current (10ms)
I_FSM
2*
A
Power dissipation
P
200
mW
Junction temperature
Storage temperature
T_j
125
°C
JEDEC
T_stg
−55~125
°C
EIAJ
TOSHIBA
―
―
1-2T1B
Note: Using continuously under heavy loads (e.g. the application of high Weight: 6.8mg
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: This is the Absolute Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4).
In the case of using Unit 1 and Unit 2 independently or simultaneously, the Absolute Maximum Ratings
per diode is 75% of the single diode one.
Electrical Characteristics (Q1, Q2, Q3, Q4 Common, Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 10mA
― I_F = 100mA
― V_R = 30V
― V_R = 80V
― V_R = 0, f = 1MHz
― I_F = 10mA (fig.1)
Min Typ. Max Unit
― 0.60 ―
― 0.72 ―
V
― 0.90 1.20
―
―
0.1
μA
―
―
0.5
―
0.9
3.0 pF
―
1.6
4.0
ns
1
2007-11-01