HN1D01FE Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon Epitaxial Planar Type Ultra High Speed Switching Application

TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D01FE
Ultra High Speed Switching Application
HN1D01FE
Unit in mm
z HN1D02FU is composed of 2 unit of cathode common.
z Low forward voltage
: V_{F (3)} = 0.92V (typ.)
z Fast reverse recovery time : t_rr = 1.6ns (typ.)
z Small total capacitance : C_T = 2.2pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
V_RM
85
V
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10ms)
Power dissipation
V_R
I_FM
I_O
I_FSM
P
80
V
300*
mA
100*
mA
2*
A
100**
mW
1. CATHODE
2. CATHODE
3. ANODE
4. CATHODE
5. CATHODE
6. ANODE
Junction temperature
Storage temperature
T_j
150
°C
T_stg
−55~150
°C
JEDEC
―
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
1-2X1A
Weight: 0.003g (typ.)
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: These are the Absolute Maximum Ratings for a single diode (Q1, Q2, Q3 or Q4).
Where Unit 1 and Unit 2 are used independently or simultaneously, the Absolute Maximum Ratings per diode
are 75% of those for a single diode.
** : Total rating.
Electrical Characteristics (Q1, Q2, Q3, Q4 Common; Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
V_{F (1)}
V_{F (2)}
V_{F (3)}
I_{R (1)}
I_{R (2)}
C_T
t_rr
Test
Circuit
Test Condition
― I_F = 1mA
― I_F = 10mA
― I_F = 100mA
― V_R = 30V
― V_R = 80V
― V_R = 0, f = 1MHz
― I_F = 10mA (fig.1)
Min Typ. Max Unit
― 0.61 ―
― 0.74 ―
V
― 0.92 1.20
―
―
0.1
μA
―
―
0.5
―
2.2
―
pF
―
1.6
―
ns
1
2007-11-01