HN1C07F Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN1C07F
HN1C07F
Audio Frequency Small Power Amplifier Applications
Driver Stage Amplifier Applications
Switching applications
Unit: mm
z Excellent Currrent gain(h_FE )linearity
: h_FE(2) =25 (min) at V_CE = 6V I_C = 400mA
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V_CBO
50
V
Collector-emitter voltage
V_CEO
50
V
Emitter-base voltage
Collector current
Base current
Collector power dissipation
V_EBO
I_C
I_B
P_C*
5
V
500
mA
50
mA
300
mW
1.EMITTER1 (E1)
2.BASE1
(B1)
3.COLLECTOR2 (C2)
4.EMITTER2 (E2)
5.BASE2
(B2)
6.COLLECTOR1 (C1)
Junction temperature
T_j
150
°C
JEDEC
―
Storage temperature range
T_stg
−55~150
°C
JEITA
TOSHIBA
―
2-3N1A
Note: Using continuously under heavy loads (e.g. the application of high _{Weight: 0.015g (Typ.)}
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*Total rating. Power dissipation per element should not exceed 200mW.
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-Emitter voltage
Transition frequency
Collector output capacitance
Marking
Symbol
I_CBO
I_EBO
h_FE(1)
h_FE(2)
V_{CE (sat)}
V_BE
f_T
C_ob
Test Condition
V_CB =50V, I_E = 0
V_EB =5V, I_C = 0
V_CE =1V, I_C =100mA
V_CE =6V, I_C = 400mA
I_C = 100mA, I_B = 10mA
V_CE = 1V, I_C = 100mA
V_CE = 6V, I_C = 20mA
V_CB = 6V, I_E = 0, f = 1MHz
Min Typ. Max Unit
―
―
0.1 μA
―
―
0.1 μA
70
―
240
25
―
―
―
0.1 0.25 V
―
0.8 1.0
V
―
300
― MHz
―
7
―
pF
Equivalent Circuit (Top View)
6 54
46
Q1
Q2
123
1
2007-11-22