HN1C03FUTE85R Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – For Muting And Switching Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN1C03F
For Muting And Switching Applications
z Including two devices in SM6 (Super mini type with 6 leads)
z High emitter-base voltage: VEBO = 25V (min)
z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA)
z Low on resistance: RON = 1Ω (typ.)(IB = 5mA)
HN1C03F
Unit in mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V_CBO
50
V
Collector-emitter voltage
V_CEO
20
V
Emitter-base voltage
V_EBO
25
V
Collector current
Base current
Collector power dissipation
Junction temperature
I_C
300
mA
JEDEC
―
I_B
60
mA
JEITA
―
P_C*
300
mW
TOSHIBA
2-3N1A
T_j
150
°C
Weight: 0.015g (typ.)
Storage temperature range
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
1
2007-11-01