HN1C01FU-Y Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Audio-Frequency General-Purpose Amplifier Applications

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
HN1C01F
Audio-Frequency General-Purpose Amplifier Applications
HN1C01F
Unit: mm
z Small package (dual type)
z High voltage and high current
: V_CEO = 50 V, I_C = 150 mA (max)
z High h_FE : h_FE = 120~400
z Excellent h_FE linearity
: h_FE (I_C = 0.1 mA) / h_FE (I_C = 2 mA) = 0.95 (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
V_CBO
60
V
Collector-emitter voltage
V_CEO
50
V
Emitter-base voltage
V_EBO
5
V
Collector current
Base current
Collector power dissipation
Junction temperature
I_C
150
mA
JEDEC
―
I_B
30
mA
JEITA
―
P_C*
300
mW
TOSHIBA
2-3N1A
T_j
125
°C
Weight: 0.015 g (typ.)
Storage temperature range
T_stg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Collector cut-off current
Emitter cut-off current
I_CBO
I_EBO
DC current gain
h_{FE (Note)}
Collector-emitter
saturation voltage
V_{CE (sat)}
Transition frequency
f_T
Collector output capacitance
C_ob
Note: hFE Classification
Y (Y): 120~240, GR (G): 200~400
( ) Marking symbol
Test
Circuit
Test Condition
― V_CB = 60 V, I_E = 0
― V_EB = 5 V, I_C = 0
― V_CE = 6 V, I_C = 2 mA
― I_C = 100 mA, I_B = 10 mA
― V_CE = 10 V, I_C = 1 mA
― V_CB = 10 V, I_E = 0, f = 1 MHz
Min Typ. Max Unit
―
―
0.1 μA
―
―
0.1 μA
120
―
400
―
0.1 0.25 V
80
―
― MHz
―
2
3.5 pF
1
2007-11-01