HN1B04FU Datasheet, PDF (1/6 Pages) Toshiba Semiconductor – NPN EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS)

HN1B04FU
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process)
HN1B04FU
Audio Frequency General Purpose Amplifier Applications
Unit: mm
Q1:High voltage and high current
: VCEO = 50V, IC = 150mA (max)
z High hFE : hFE = 120~400
z Excellent hFE linearity
: hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.)
Q2:
z High voltage and high current
: VCEO = −50V, IC = −150mA (max)
z High hFE : hFE = 120~400
z Excellent hFE linearity
: hFE (IC = −0.1mA) / hFE (IC = −2mA) = 0.95 (typ.)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_B
Rating
60
50
5
150
30
JEDEC
EIAJ
TOSHIBA
Weight: 6.8mg
―
―
2-2J1A
Marking
Unit
V
V
V
mA
mA
1
2007-11-01