HN1A01FU_07 Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN1A01FU
HN1A01FU
Audio Frequency General Purpose Amplifier Applications
Unit: mm
z Small package (Dual type)
z High voltage and high current
: VCEO =−50V, IC =−150mA (max)
z High hFE: hFE = 120~400
z Excellent hFE linearity
: hFE (IC =−0.1mA) / hFE (IC =−2mA) = 0.95 (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C*
T_j
T_stg
−50
V
−50
V
−5
V
−150
−30
200
125
mA
JEDEC
―
mA
EIAJ
―
mW
TOSHIBA
2-2J1A
°C
Weight: 6.8mg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)
Characteristic
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Transition frequency
Collector output capacitance
Symbol
I_CBO
I_EBO
h_{FE (Note)}
V_{CE (sat)}
f_T
C_ob
Test
Circuit
Test Condition
― V_CB = −50V, I_E = 0
― V_EB = −5V, I_C = 0
― V_CE = −6V, I_C = −2mA
― I_C = −100mA, I_B = −10mA
― V_CE = −10V, I_C = −1mA
― V_CB = −10V, I_E = 0, f = 1MHz
Note: hFE Classification
Y (Y): 120~240, GR (G): 200~400
( ) Marking Symbol
Min Typ. Max Unit
―
― −0.1 μA
―
― −0.1 μA
120
―
400
― −0.1 −0.3 V
80
―
― MHz
―
4
7
pF
1
2007-11-01