HN1A01FU-Y Datasheet, PDF (1/4 Pages) Toshiba Semiconductor – Audio-Frequency General-Purpose Amplifier Applications

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN1A01F
Audio-Frequency General-Purpose Amplifier
Applications
HN1A01F
Unit: mm
z Small package (dual type)
z High voltage and high current
: V_CEO = −50 V, I_C = −150 mA (max)
z High h_FE: h_FE = 120~400
z Excellent h_FE linearity
: h_FE (I_C = −0.1 mA) / h_FE (I_C = −2 mA) = 0.95 (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
V_CBO
V_CEO
V_EBO
I_C
I_B
P_C*
T_j
T_stg
−50
V
−50
V
−5
−150
−30
300
125
V
mA
JEDEC
JEITA
mA
TOSHIBA
―
―
2-3N1A
mW
Weight: 0.015 g (typ.)
°C
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*Total rating
Electrical Characteristics (Ta = 25°C) (Q1, Q2 Common)
Characteristic
Symbol
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
I_CBO
I_EBO
h_{FE (note)}
V_{CE (sat)}
f_T
Collector output capacitance
C_ob
Note:hFE Classification
Y (Y): 120~240, GR (G): 200~400
( ) Marking Symbol
Test
Circuit
Test Condition
― V_CB = −50 V, I_E = 0
― V_EB = −5 V, I_C = 0
― V_CE = −6 V, I_C = −2 mA
― I_C = −100 mA, I_B = −10 mA
― V_CE = −10 V, I_C = −1 mA
―
V_CB = −10 V, I_E = 0,
f = 1 MHz
Min Typ. Max Unit
―
― −0.1 μA
―
― −0.1 μA
120
―
400
―
― −0.1 −0.3 V
80
―
― MHz
―
4
7
pF
1
2007-11-01