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HN1A01FE Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications | |||
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN1A01FE
HN1A01FE
Audio Frequency General Purpose Amplifier Applications
Unit: mm
z Small package (Dual type)
z High voltage and high current
: VCEO = â50V, IC = â150mA (max)
z High hFE: hFE = 120~400
z Excellent hFE linearity
: hFE (IC = â0.1mA) / hFE (IC = â2mA) = 0.95 (typ.)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
â50
V
Collector-emitter voltage
VCEO
â50
V
Emitter-base voltage
VEBO
â5
V
Collector current
IC
â150
mA
Base current
IB
â30
mA
Collector power dissipation
Junction temperature
Storage temperature range
PC*
100
mW
JEDEC
Tj
150
°C
JEITA
Tstg
â55~150
°C
TOSHIBA
â
â
2-2N1A
Note: Using continuously under heavy loads (e.g. the application of high Weight: 3.0mg(typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(âHandling Precautionsâ/âDerating Concept and Methodsâ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*Total rating
Electrical Characteristics (Ta = 25°C) (Q1,Q2 Common)
Characteristic
Symbol
Test
Circuit
Test Condition
Collector cut-off current
ICBO
â VCB = â50V, IE = 0
Emitter cut-off current
IEBO
â VEB = â5V, IC = 0
DC current gain
hFE (Note)
â VCE = â6V, IC = â2mA
Collector-emitter saturation voltage
VCE (sat)
â IC = â100mA, IB = â10mA
Transition frequency
fT
â VCE = â10V, IC = â1mA
Collector output capacitance
Cob
â VCB = â10V, IE = 0, f = 1MHz
Note: hFE Classification Y (Y): 120~240, GR (G): 200~400 ( ) Marking Symbol
Min Typ. Max Unit
â
â â0.1 μA
â
â â0.1 μA
120
â
400
â â0.1 â0.3 V
80
â
â MHz
â
4
â
pF
Marking
Equivalent Circuit (Top View)
1
2007-11-01
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