GT8G134 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Silicon N Channel IGBT Strobe Flash Applications

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G134
Strobe Flash Applications
• Compact and Thin (TSSOP-8) package
• Enhancement-mode
• Peak collector current: IC = 150 A (max)
(@VGE=2.5V(min))/
Absolute Maximum Ratings (Ta = 25°C)
GT8G134
Unit: mm
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage
V_CES
400
V
DC
V_GES
±4
Gate-emitter voltage
V
Pulse
V_GES
±5
Collector current
Pulse
I_CP
(Note 1)
150
A
Collector power
(Note 2a)
P_C (1)
1.1
W
dissipation（t＝10 s）
(Note 2b)
P_C (2)
0.6
W
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Thermal Characteristics
1,2 EMITTER
3 EMITTER (Gate drive connection)
4 GATE
5,6,7,8 COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
－
Weight: 0.035 g (typ.)
Circuit Configuration
8765
Characteristics
Symbol
Thermal resistance , junction to
ambient (t = 10 s)
(Note2a)
Thermal resistance , junction to
ambient (t = 10 s)
(Note2b)
R_{th (j-a)} (1)
R_{th (j-a)} (2)
Rating
114
208
Unit
°C/W
°C/W
Marking (Note 3)
Note : For (Note 1) , (Note 2a) , (Note 2b) and (Note 3) , Please refer to the
next page.
Part No. (or abbreviation code)
5
4
6
8G134
3
7
2
8
1
1234
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
1
2007-07-23