GT8G133 Datasheet, PDF (1/7 Pages) Toshiba Semiconductor – Strobe Flash Applications

GT8G133
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT8G133
Strobe Flash Applications
• Compact and Thin (TSSOP-8) package
• Enhancement-mode
• 4-V gate drive voltage: V_GE = 4.0 V (min) (@I_C = 150 A)
• Peak collector current: I_C = 150 A (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
DC
Pulse
Collector current
Pulse
(Note 1)
Symbol
V_CES
V_GES
V_GES
I_CP
Rating
Unit
400
V
±6
V
±8
150
A
Collector power
(Note 2a)
P_C (1)
1.1
W
dissipation（t＝10 s） _{(Note 2b)}
P_C (2)
0.6
W
Junction temperature
T_j
150
°C
Storage temperature range
T_stg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Thermal Characteristics
Characteristics
Thermal resistance , junction to
ambient (t = 10 s)
(Note2a)
Thermal resistance , junction to
ambient (t = 10 s)
(Note2b)
Symbol
R_{th (j-a)} (1)
R_{th (j-a)} (2)
Rating
114
208
Unit
°C/W
°C/W
Marking (Note 3)
Part No. (or abbreviation code)
8G133
Unit: mm
1.2.3 EMITTER
4
GATE
5.6.7.8 COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
2-3R1G
Weight: 0.035 g (typ.)
Circuit Configuration
8765
1234
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note : For (Note 1) , (Note 2a) , (Note 2b) and (Note 3) , Please refer to the next page.
1
2006-11-02