GT8G121_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – STROBE FLASH APPLICATIONS

GT8G121
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT8G121
STROBE FLASH APPLICATIONS
Unit: mm
z 4th Generation (Trench Gate Structure)
z Enhancement−Mode
z Low Saturation Voltage
: V_{CE (sat)} = 7 V (Max.) (@I_C = 150 A)
z 4 V Gate Drive
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector−Emitter Voltage
V_CES
400
V
DC
V_GES
±6
V
Gate−Emitter Voltage
Pulse
V_GES
±8
V
Collector Current
DC
I_C
1 ms
I_CP
8
A
150
A
Collector Power
Dissipation
Ta = 25°C
P_C
Tc = 25°C
P_C
1.1
W
20
W
Junction Temperature
T_j
150
°C
JEDEC
―
Storage Temperature Range
T_stg
−55~150
°C
JEITA
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA (A) 2−7B5C (B) 2−7B6C
Weight: 0.36 g
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
Gate Leakage Current
I_GES
V_GE = 6 V, V_CE = 0
―
Collector Cut−off Current
I_CES
V_CE = 400 V, V_GE = 0
―
Gate−Emitter Cut−off Voltage
V_{GE (OFF)} I_C = 1 mA, V_CE = 5 V
0.8
Collector−Emitter Saturation Voltage
V_{CE (sat)} I_C = 150 A, V_GE = 4 V (Pulsed)
―
Input Capacitance
C_ies
V_CE = 10 V, V_GE = 0,
f = 1 MHz
―
Rise Time
t_r
―
Turn−on Time
t_on
―
Switching Time
Fall Time
t_f
―
Turn−off Time
t_off
―
Thermal Resistance
R_{th (j−c)}
―
―
These devices are MOS type. Users should follow proper ESD Handling Procedures.
Operating condition of turn-off dv / dt should be lower than 400 V / μs.
1
TYP.
―
―
―
3.5
MAX
10
10
1.5
7
UNIT
μA
μA
V
V
3800 ―
pF
2.3
―
2.5
―
μs
1.7
―
2.1
―
― 6.25 °C / W
2006-11-02