GT8G103_06 Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – STROBE FLASH APPLICATIONS

GT8G103
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT8G103
STROBE FLASH APPLICATIONS
z 3rd Generation
z Enhancement−Mode
(A)
z Low Saturation Voltage: V_{CE (sat)} = 8 V (Max.) (@I_C = 150 A)
z 4.5 V Gate Drive
Unit: mm
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Collector−Emitter Voltage
Gate−Emitter Voltage
DC
Pulse
Collector Current
DC
1 ms
Collector Power
Dissipation
Ta = 25°C
Tc = 25°C
Junction Temperature
Storage Temperature Range
SYMBOL
V_CES
V_GES
V_GES
I_C
I_CP
P_C
P_C
T_j
T_stg
RATING
400
±6
±8
8
150
1.3
20
150
−55~150
UNIT
V
V
V
A
A
W
W
°C
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual reliability
data (i.e. reliability test report and estimated failure rate, etc).
(B)
JEDEC
⎯
JEITA
⎯
TOSHIBA (A) 2-7B5C (B) 2-7B6C
Weight: 0.36 g (typ.)
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN
Gate Leakage Current
I_GES
V_GE = 6 V, V_CE = 0
―
Collector Cut−off Current
I_CES
V_CE = 400 V, V_GE = 0
―
Gate−Emitter Cut−off Voltage
V_{GE (OFF)} I_C = 1 mA, V_CE = 5 V
0.5
Collector−Emitter Saturation Voltage
V_{CE (sat)} I_C = 150 A, V_GE = 4.5 V (Pulsed)
―
Input Capacitance
C_ies
V_CE = 10 V, V_GE = 0, f = 1 MHz
―
Rise Time
t_r
―
Switching Time
Turn−on Time
t_on
―
Fall Time
t_f
―
Turn−off Time
t_off
―
Thermal Resistance
R_{th (j−c)}
―
―
These devices are MOS type. Users should follow proper ESD Handling Procedures.
Operating condition of turn-off dv / dt should be lower than 400 V / μs.
TYP.
―
―
―
5
1900
1.2
1.4
1.8
2.4
―
MAX UNIT
10
μA
10
μA
1.2
V
8
V
−
pF
―
―
μs
―
―
6.25 °C / W
1
2006-11-02